Nanostructure boosts stability of organic thin-film transistors

A nanostructured gate dielectric may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors. The structure, composed of a fluoropolymer layer followed by a nanolaminate made from two metal oxide materials, serves as gate dielectric and simultaneously protects the organic semiconductor - which had previously been vulnerable to damage from the ambient environment - and enables the transistors to operate with unprecedented stability.